anil

Anil Annadi

Associate Professor
anil.annadi@mahindrauniversity.edu.in

Dr. Anil Annadi is an Associate Professor of Physics at Mahindra University École Centrale School of Engineering. He obtained his Ph.D. in Physics from National University of Singapore, Singapore in 2013. Later he worked as a postdoctoral fellow in University of Pittsburgh and The University of Chicago, USA (2014 – 2017), and subsequently at National University of Singapore (2017-2020). Prior to joining MU, he briefly worked as an Assistant Professor, School of Advanced Sciences, Vellore Institute of Technology, Vellore, India. His research interests are Condensed Matter Physics (Experimental): His research interests primarily deal with Solid state electronics, with emphasis on designing novel functional material systems for electronic and energy applications. Material of interests are electron correlated systems, magnetoelectric and phase change materials, transparent conductors and high mobility 2D electron systems. He has published 48 national and international peer-reviewed journal papers, with total citations over 1700 and current h-index 20.

2009 - 2013

  • Ph.D. in Physics 2009 – 2013
    National University of Singapore, Singapore.

2007-2009

  • M.Tech. in Solid State Technology 2007 – 2009
    Indian Institute of Technology, Kharagpur, India.

2004-2006

  • M.Sc. in Physics, University College of Science 2004 – 2006
    Osmania University, Hyderabad, India.

2021 - present

  • Assistant Professor 03/2021 – present
    Physics, Mahindra Ecole Centrale, Mahindra University, Hyderabad, India.

2020-2021

  • Assistant Professor 06/2020 –02/2021
    School of Advanced Sciences,Vellore Institute of Technology, Vellore, India.

2017-2020

  • Research Fellow10/2017 – 02/2020
    Materials Science and Engineering, National University of Singapore, Singapore.

2016-2017

  • Postdoctoral Scholar03/2016 – 04/2017
    Institute for Molecular Engineering, The University of Chicago, Chicago, USA.

2014-2016

  • Research Associate 04/2014 – 02/2016 
    Pittsburgh Quantum Institute, University of Pittsburgh, Pittsburgh, USA.

Research and Academic Publications:

2018

  • Book Chapter: Co-authored book chapter “Two-Dimensional Electron Gas at LaAlO3/SrTiO3 Interfaces” Zhiqi Liu, Anil Annadi. Textbook “Functional Materials and Electronics” 1st edition, Apple Academic Press, New York, 2018.
  • Guest Editor for special issues “Synthesis, Properties, and Applications of Multifunctional Magnetic Nanostructures” published in Journal of Nanomaterials by Hindawi publications – 2017, 2018. 
  • Authorship in 45 international publications. Google Scholar: total citations 1350, h-index 19, i-10 index 25. Researcher ID: M-1239-2014, ORICD: 0000-0003-2817-8225. Google Scholar: https://scholar.google.com/citations?user=-XM1P8AAAAJ&hl=en&authuser=1

    • Selected Publications:

    2020

  • A. Annadi, N. Zhang, D. B. K. Lim, H. Gong. New Transparent Magnetic Semiconductor NixCu1−xI which Can Perform as Either P‐type or N‐type and Success in the P−N Homojunction Diode, ACS Appl. Mater. Interfaces (2020), 12, 6048−6055, IF 8.0

    • 2019

  • Anil Annadi, Shicheng Lu, Hyungwoo Lee, Jung-Woo Lee, Guanglei Cheng, Anthony Tylan-Tyler, Megan Briggeman, Michelle Tomczyk, Mengchen Huang, David Pekker, Chang-Beom Eom, Patrick Irvin, Jeremy Levy, Quantized Ballistic Transport of Electrons and Electron Pairs in LaAlO3/SrTiO3 Nanowires, Nano Letters, (2018), 18 (7), 4473–4481. IF 12.7, Citations 25.
  • A. Annadi, N. Zhang, D. B. K. Lim, H. Gong. Hole Transport Modulations in Low Dimensional γ-CuI Films; Implication for High Figure of Merit and Thin Film Transistors, ACS Appl. Electron. Mater (2019), 1, 6, 1029-103. 

    • 2018

  • Guanglei Cheng, Anil Annadi, Shicheng Lu, Hyungwoo Lee, Jung-Woo Lee, Mengchen Huang, Chang-Beom Eom, Patrick Irvin, Jeremy Levy. Shubnikov–de Haas–like Quantum Oscillations in Artificial One-Dimensional LaAlO3/SrTiO3 Electron Channels, Phys. Rev. Lett. 120, 076801 (2018). I.F 7.7, Citations 2.
  • Yun-Yi Pai, Hyungwoo Lee, Jung-Woo Lee, Anil Annadi, Guanglei Cheng, Shicheng Lu, Michelle Tomczyk, Mengchen Huang, Chang-Beom Eom, Patrick Irvin, Jeremy Levy. One Dimensional Nature of Superconductivity at the LaAlO3/SrTiO3 Interface, Phys. Rev. Lett. 120, 147001 (2018), IF 8.0.

    • 2016

  • J. Lin, A. Annadi, S. Sonde, C. Chen, L. Stan, K.V.L.V. Narayanachari, S. Ramanathan, and S. Guha, “Low-Voltage Artificial Neuron using Feedback Engineered Insulator-to-Metal-Transition Devices,” conference publication at IEEE Int’l Electron Devices Meeting (IEDM) Tech. Dig., pp.862-865, (2016). IF 2.52, Citations 8.
  • W.M. Lü, Surajit Saha, X Renshaw Wang, Z.Q. Liu, K. Gopinadhan, A. Annadi, S.W. Zeng, Z Huang, B.C Bao, C.X Cong, M. Venkatesan, T Yu, J.M.D Coey, Ariando, T. Venkatesan. Long-range magnetic coupling across a polar insulating layer. Nature Communications 7, 11015 (2016). IF 10.7, Citations 8.
  • Michelle Tomczyk, Guanglei Cheng, Hyungwoo Lee, Shicheng Lu, Anil Annadi, Joshua P Veazey, Mengchen Huang, Patrick Irvin, Sangwoo Ryu, Chang-Beom Eom, Jeremy Levy Micrometer-Scale Ballistic Transport of Electron Pairs in LaAlO3/SrTiO3 Nanowires. Phys. Rev. Lett. 117, 096801 (2016). I.F 7.7, Citations 20.

    • 2015

  • Kalon Gopinadhan, Anil Annadi, Younghyun Kim, Amar Srivastava, Brijesh Kumar, Jingsheng Chen, J Michael D Coey, Ariando, Thirumalai Venkatesan. Gate Tunable In-and Out-of-Plane Spin–Orbit Coupling and Spin-Splitting Anisotropy at LaAlO3/SrTiO3 (110) Interface, Advanced electronic materials, 1 (8), 1500114, (2015). IF 5.4.
  • Changjian Li, Zhiqi Liu, Weiming Lü, Xiao Renshaw Wang, Anil Annadi, Zhen Huang, Shengwei Zeng, T Venkatesan, Tailoring the Two-Dimensional Electron Gas at Polar ABO3/SrTiO3 Interfaces for Oxide Electronics, Scientific Reports, 5, 13314 (2015).
  • Kalon Gopinadhan, Brijesh Kumar, Natalie Palina, M Motapathula, I Pallecchi, TP Sarkar, Y. Zhihua, JQ Chen, A. Annadi, A Rana, Amar Srivastava, D Marré, Jingsheng Chen, S Dhar, A. Rusydi, T Venkatesan, Effect of Nb and Ta substitution on donor electron transport and ultrafast carrier dynamics in anatase TiO2 thin films. Journal of Materials Chemistry C 3 (24), 6329-6333 (2015).

    • 2014

  • T. C. Asmara, A. Annadi, I. Santoso, P. K. Gogoi, A. Kotlov, H. M. Omer, M. Motapothula, M.B.H. Breese, M. Rübhausen, T. Venkatesan, Ariando and A. Rusydi. Mechanisms of charge transfer and redistribution in LaAlO3/SrTiO3 revealed by high-energy optical conductivity, Nature Communications 5, 3663 (2014). IF 10.7, Citations 48.
  • Kulothungasagaran Narayanapillai, Kalon Gopinadhan, Xuepeng Qiu, Anil Annadi, Ariando, Thirumalai Venkatesan, Hyunsoo Yang. Current-driven spin orbit field in LaAlO3/SrTiO3 heterostructures, Appl. Phys. Lett. 105, 162405 (2014).
  • Z Huang, ZQ Liu, M Yang, SW Zeng, A Annadi, WM Lü, XL Tan, PF Chen, L Sun, X Renshaw Wang, YL Zhao, CJ Li, J Zhou, K Han, WB Wu, YP Feng, JMD Coey, T Venkatesan, Biaxial strain-induced transport property changes in atomically tailored SrTiO3 -based systems, Phys. Rev. B 90, 125156 (2014).

    • 2013

  • Sinu Mathew*, Anil Annadi* (*Equal contribution), Taw Kuei Chan, Teguh Citra Asmara, Da Zhan, Xiao Renshaw Wang, Sara Azimi, Zexiang Shen, Andrivo Rusydi, Araindo, Mark B. H. Breese, and T. Venkatesan. Tuning the interface conductivity of LaAlO3/SrTiO3 using ion beams-implications for patterning, ACS Nano, 7, 10572-10581 (2013), IF 13.0, Citations 27.
  • A. Annadi, Z. Huang, K. Gopinadhan, X. Renshaw Wang, A. Srivastava, Z. Q. Liu, H. Harsan Ma, T. P. Sarkar, T. Venkatesan, and Ariando. Fourfold oscillation in anisotropic magneto resistance and planar Hall Effect at the LaAlO3/SrTiO3 Heterointerfaces: Effect of carrier confinement and electric field on magnetic interactions, Physical Review B 87, 201102 (Rapid communications) (2013). IF 3.68, Citations 30.
  • Natalia Palina, Anil Annadi, Teguh Citra Asmara, Caozheng Diao, Xiaojiang Yu, Mark BH Breese, T Venkatesan, Andrivo Rusydi, Electronic defect states at the LaAlO3/SrTiO3 heterointerface revealed by O K-edge X-ray absorption spectroscopy, Physical Chemistry Chemical Physics 18 (20), 13844-13851. IF 3.0.
  • Z. Q. Liu, C. J. Li, W. M. Lu, X. H. Huang, Z. Huang, S. W. Zeng, X. P. Qiu, L. S. Huang, A. Annadi, J. S Chen, J. M. D Coey, T Venkatesan. Origin of the two-dimensional electron gas at LaAlO3/SrTiO3 interfaces-The role of oxygen vacancies and electronic reconstruction, Physical Review X 3, 021010 (2013). IF 7.81, Citations 198.

    • 2012

  • A. Annadi, A. Putra, Z. Q. Liu, X. Wang, K. Gopinadhan, Z. Huang, S. Dhar, T. Venkatesan, and Ariando. Electronic correlation and strain effects at the interfaces between polar and non-polar complex oxides, Physical Review B, 86, 085450 (2012). IF 3.68, Citations 50.
  • A. Annadi, A. Putra, A. Srivastava, X. Wang, Z. Huang, Z. Q. Liu, T. Venkatesan, and Ariando. Evolution of variable range hopping in strongly localized two-dimensional electron gas at NdAlO3/SrTiO3 (100) heterointerfaces, Applied Physics Letters, 101, 231604 (2012). IF 3.52, Citations 12.
  • A. Roy Barman, M Motapothula, A. Annadi et al., Multifunctional Ti1−xTaxO2: Ta doping or alloying? Applied Physics Letters, 98, 072111 (2012). IF 3.52, Citations 27.
  • A Srivastava, TS Herng, S Saha, B Nina, A Annadi et al., Coherently coupled ZnO and VO2 interface studied by photoluminescence and electrical transport across a phase transition, Applied Physics Letters, 100, 241907 (2012). 

    • 2011

  • Ariando, X. Wang, G. Baskaran, Z. Q. Liu, J. Huijben, J. B. Yi, A. Annadi, A Roy Barman, A Rusydi, S Dhar, YP Feng, J Ding, H Hilgenkamp, T Venkatesan. Electronic phase separation at the LaAlO3/SrTiO3 interface, Nature Communications 2, 188 (2011). IF 10.7, Citations 210.
    • Condensed Matter Physics (Experimental): Solid state electronics
    • Design of functional transition metal oxides, semiconductor materials and their interfaces/surfaces to create novel phenomena through coupling of spin, charge and lattice degrees of freedom.
    • Quantum transport at low dimensional devices through electrostatic gating and implementation of their device concepts.
    • Development of new functional material systems for low power and energy applications, such as spin-charge devices, and non-volatile memory.
    • Materials of interest are correlated electron systems, magnetoelectric and phase change materials, and transparent conductors.